GT15J321 2003-03-18 1 toshiba insulated gate bipolar transistor silicon n channel igbt GT15J321 high power switching applications fast switching applications the 4th generation fs (fast switching) enhancement-mode high speed: t f = 0.03 s (typ.) low saturation voltage: v ce (sat) = 1.90 v (typ.) frd included between emitter and collector. maximum ratings (ta 25c) characteristics symbol rating unit collector-emitter voltage v ces 600 v gate-emitter voltage v ges 20 v dc i c 15 collector current 1 ms i cp 30 a dc i f 15 emitter-collector forward current 1 ms i fm 30 a collector power dissipation (tc 25c) p c 30 w junction temperature t j 150 c storage temperature range t stg 55~150 c equivalent circuit unit: mm jedec D jeita D toshiba 2-10r1c weight: 1.7 g gate emitter collector
GT15J321 2003-03-18 2 electrical characteristics (ta 25c) characteristics symbol test condition min typ. max unit gate leakage current i ges v ge 20 v, v ce 0 500 na collector cut-off current i ces v ce 600 v, v ge 0 1.0 ma gate-emitter cut-off voltage v ge (off) i c 1.5 ma, v ce 5 v 3.5 6.5 v collector-emitter saturation voltage v ce (sat) i c 15 a, v ge 15 v 1.90 2.45 v input capacitance c ies v ce 20 v, v ge 0, f 1 mhz 2300 pf rise time t r 0.04 turn-on time t on 0.17 fall time t f 0.03 0.15 switching time turn-off time t off inductive load v cc 300 v, i c 15 a v gg 15 v, r g 43 (note 1) 0.34 s peak forward voltage v f i f 15 a, v ge 0 2.0 v reverse recovery time t rr i f 15 a, di/dt 100 a/ s 200 ns thermal resistance (igbt) r th (j-c) 4.16 c/w thermal resistance (diode) r th (j-c) 4.63 c/w note 1: switching time measurement circuit and input/output waveforms note 2: switching loss measurement waveforms 10% 90% v ge v ce i c e off e on 0 0 5% 10% 90% v ge v ce i c t d (off) t off t d (on) t r t on 0 0 t f 10% 10% 10% 90% 10% 90% r g i c v ce l v cc v ge
GT15J321 2003-03-18 3 collector current i c (a) collector-emitter voltage v ce (v) collector-emitter voltage v ce (v) i c ? v ce collector current i c (a) gate-emitter voltage v ge (v) v ce ? v ge collector-emitter voltage v ce (v) gate-emitter voltage v ge (v) v ce ? v ge collector-emitter voltage v ce (v) gate-emitter voltage v ge (v) v ce ? v ge gate-emitter voltage v ge (v) i c ? v ge case temperature tc (c) v ce (sat) ? tc collector-emitter saturation voltage v ce (sat) (v) 0 4 8 12 16 12 0 4 8 16 20 15 i c 6 a 30 20 common emitter tc 125c 4 3 2 1 0 60 20 20 60 100 140 common emitter v ge 15 v 15 a i c 6 a 30 a 0 4 8 12 16 12 0 4 8 16 20 common emitter tc 25c 15 i c 6 a 30 20 0 4 8 12 16 12 0 4 8 16 20 common emitter tc 40c 15 i c 6 a 30 20 50 40 30 20 10 0 5 0 1 2 3 4 v ge 7 v 8 9 15 20 common emitter tc 25c 30 20 10 0 0 4 8 12 16 tc 125c common emitter v ce 5 v 25 40 20 25 15 5
GT15J321 2003-03-18 4 switching loss e on , e off (mj) switching time t off , t f ( s) gate resistance r g ( ) switching time t on , t r ? r g switching time t on , t r ( s) collector current i c (a) switching time t on , t r ? i c switching time t on , t r ( s) gate resistance r g ( ) switching time t off , t f ? r g switching time t off , t f ( s) collector current i c (a) switching time t off , t f ? i c gate resistance r g ( ) switching loss e on , e off ? r g collector current i c (a) switching loss e on , e off ? i c switching loss e on , e off (mj) 1 0.5 0.3 0.05 0.1 3 0.01 1 10 30 100 300 1000 3 0.03 common emitter v cc 300 v v gg 15 v i c 15 a : tc 25c : tc 125c t on t r 3 0 1 0.3 0.01 0.03 3 6 9 12 15 common emitter v cc 300 v v gg 15 v r g 43 : tc 25c : tc 125c t r t on 0.1 0.5 0.05 3 0 1 0.3 0.01 0.03 3 6 9 12 15 common emitter v cc 300 v v gg 15 v r g 43 : tc 25c : tc 125c t f t off 0.1 0.5 0.05 1 0.5 0.3 0.05 0.1 3 0.01 1 10 30 100 300 1000 3 0.03 t off t f common emitter v cc 300 v v gg 15 v i c 15 a : tc 25c : tc 125c 1 10 30 100 300 1000 3 10 3 1 0.03 0.1 0.3 e of f e on 5 0.5 0.05 common emitter v cc 300 v v gg 15 v i c 15 a : tc 25c : tc 125c (note 2) 3 0 0.01 10 6 9 12 15 1 0.1 e off e on common emitter v cc 300 v v gg 15 v r g 43 : tc 25c : tc 125c (note 2) 0.3 0.03 3 5 0.5 0.05
GT15J321 2003-03-18 5 collector current i c (a) reverse recovery current i rr (a) collector-emitter voltage v ce (v) c ? v ce capacitance c (pf) gate-emitter voltage v ge (v) gate charge q g (nc) v ce , v ge ? q g collector-emitter voltage v ce (v) forward voltage v f (v) i f v f forward current i f (a) reverse recovery time t rr (ns) forward current i f (a) t rr , i rr if collector-emitter voltage v ce (v) safe operating area collector-emitter voltage v ce (v) reverse bias soa collector current i c (a) 1 10 30 100 300 1000 3 1000 300 100 3 10 30 3000 3000 common emitter v ge 0 f 1 mhz tc 25c c res c oes c ies common emitter r l 20 tc 25c 0 0 20 60 80 120 0 4 8 12 16 20 100 200 300 400 500 300 200 40 100 v ce 100 v 0 0 0.4 0.8 1.2 2.0 5 10 20 25 30 1.6 15 common collector v ge 0 tc 125c 25 40 0 3 6 9 12 15 10 1 100 100 10 1000 i rr t rr common collector di/dt 100 a/ s v ge 0 : tc 25c : tc 125c 3 30 30 300 1 3 10 0.3 0.5 0.1 3 5 1 30 50 10 30 100 300 1000 t j 125c v ge 15 v r g 43 1 3 10 0.3 0.5 0.1 3 5 1 30 50 10 30 100 300 1000 * : single nonrepetitive pulse tc 25c curves must be derated linearly with increase in temperature. i c max (pulsed) * i c max (continuous) dc operation 1 ms * 100 s * 50 s * 10 ms *
GT15J321 2003-03-18 6 pulse width t w (s) r th (t) ? t w transient thermal impedance r th (t) (c/w) 10 3 10 2 10 5 10 4 10 3 10 2 10 1 10 0 10 1 10 2 10 2 10 1 10 0 10 1 10 4 igbt frd tc 25c
GT15J321 2003-03-18 7 toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc.. the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this document shall be made at the customer?s own risk. the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba corporation for any infringements of intellectual property or other rights of the third parties which may result from its use. no license is granted by implication or otherwise under any intellectual property or other rights of toshiba corporation or others. the information contained herein is subject to change without notice. 000707ea a restrictions on product use
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